Question

In a p-n junction a potential barrier of 350 meV exists across the junction. A hole with a kinetic energy of 400 meV approaches. The K.E. of the hole when it crosses the junction (i) from p to n side (ii) from n to p side will be

Answer 1

Answer:

1 from p to n side

Explanation:

A p-n junction diode is two-terminal or two-electrode semiconductor device, which allows the electric current in only one direction while blocks the electric current in opposite or reverse direction. ... The p-n junction, which is formed when the p-type and n-type semiconductors are joined, is called as p-n junction diode.

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Answer 2

Explanation:

As the junction potential is 350 mev

When current  with a kinetic energy of 400 meV pass from p to n , barrier opposes the motion

Giving net energy = 50 mev

When current  with a kinetic energy of 400 meV pass from n to p, barrier support  the motion

Giving net energy = 750 mev