In a p-n junction diode the forward bias resistance is low as compared to
the reverse bias resistance. Give reason.
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Answer:
depltion layer of forward bias is small so lower potential barrirer so low resistance
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In a p-n junction diode, the forward bias resistance is low in comparsion to
the reverse bias resistance due to the majority carriers that are responsible for current in forward biasing
- In forward biasing diffusion current flows driven by a concentration gradient
- If there is a small increase in forward voltage across the p-n junction, then it leads to a large increase in forward current. Hence the resistance is low in case of forward biasing.
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