Question

In a p+-n Si junction, the n side has a donor concentration of 1016 cm-3. If ni=1010 cm-3, the relative dielectric constant r=12, calculate the depletion width at a reverse bias of 100 V ? What is the electric field at the mid-point of the depletion region on the n side? (Hint: Remember that p+means very heavily doped!)

Answer 1

Find the Laplace transform of the following functions. f(t) = {3 if 0 lessthanorequalto t lessthanorequalto 2 otherwise g(t) = {5/2 t 0 if 0 lessthanorequalto t lessthanorequalto 2 otherwise Find the Laplace transform of h(t) = 10e^-4tcos(20t + 36.9degree)