in a transistor collector current is controlled by
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Explanation:
Bipolar transistors can be considered voltage-controlled devices (fundamentally the collector current is controlled by the base-emitter voltage; the base current could be considered a defect and is controlled by the characteristics of the base-emitter junction and recombination in the base).
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In a transistor collector current is controlled by base voltage or collector voltage.
- The voltage applied across a field-effect transistor's gate and source terminals, which also forms the channel, determines the channel's width. Along with the channel width, the drain-source resistance varies. A FET is, thus, a voltage-driven device. In the active area of the transistor, the base current regulates the collector current. A transistor is made up of two PN junctions: an emitter junction and a collector junction. When the collector junction is reverse biassed and the emitter junction is forward biassed, this area is active.
- The term "FET" refers to a three-terminal, unipolar semiconductor device. It's a voltage-controlled device, not a bipolar junction transistor. The base current and the collector current are produced by the transistor from the energy produced by the emitter circuit, which is split at that point. The majority of the departing current, which is sometimes referred to as collector current, is made up of base current.
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