In figure given below V₀ is the potential barrier across a p–n junction, when no battary is connected across the junction
(a) 1 and 3 both correspond to forward bias of junction
(b) 3 corresponds to forward bias of junction and 1 corresponds to reverse bias of junctions
(c) 1 corresponds to forward bias and 3 corresponds to reverse bias of junction
(d) 3 and 1 both correspond to reverse bias of junction
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Reverse bias. Under reverse bias (applying a negative voltage to the P-side with respect to the N-side), the potential drop (i.e., voltage) across the depletion region increases. Essentially, majority carriers are pushed away from the junction, leaving behind more charged ions.
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