Question

In MOSFET threshold voltage measures

Answer 1

Answer:

The main monitored parameters are the threshold voltage VTH, defined as the gate voltage for which IDS = 18 mA at VDS = VGS, the gate leakage current IGSS measured at VGS = 20 V and the on-state resistance RDSON which is defined for VGS = 20 V at the nominal current value IDS = 50 A of the device