Question

Light illuminates an n-type silicon with N_D=1×10^{16}cm^{−3}N D ​ =1×10 16 cm −3 , producing electron-hole pairs uniformly throughout the semiconductor at a rate of 1×10^{21}cm^{−3}s^{−1}1×10 21 cm −3 s −1 . The semiconductor contains 1 \times 10^{15}cm^{−3}1×10 15 cm −3 recombination centers whose energy level is located at the intrinsic Fermi level, E_iE i ​ , and capture cross sections for electrons and holes are both 1 \times 10^{−14}cm^21×10 −14 cm 2 . Assume Shockley-Hall-Reed recombination is the only recombination mechanism and thermal velocity is v_{th}=10^7 cm/sv th ​ =10 7 cm/s for both electrons and holes.

Answer 1

Answer:

No idea. I am really sorry ma'am.