Science, asked by 169p5a0413, 8 months ago

Near-avalanche breakdown in MOSFET
is an ultimate outcome of
(1) First order effects
(2) Second order effects
(3) Third order effects
(4) None of the above

Answers

Answered by Fatimakincsem
0

Near-avalanche breakdown in MOSFET  is the ultimate outcome of second- order effects.

Option (2) is correct.

Explanation:

  • Due to second-order effects in MOSFET, a new phenomenon is generated called 'Near-avalanche breakdown'.
  • When the voltage is drained to the maximum extent, then there are chances of a reduction in the size of MOSFET.
  • Another action known as parasitic BJY can also occur due to increased voltage.
  • Increased supply of current can damage the SiO2 layer which results in breakdown and ultimately causes failure of the device.
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