Near-avalanche breakdown in MOSFET
is an ultimate outcome of
(1) First order effects
(2) Second order effects
(3) Third order effects
(4) None of the above
Answers
Answered by
0
Near-avalanche breakdown in MOSFET is the ultimate outcome of second- order effects.
Option (2) is correct.
Explanation:
- Due to second-order effects in MOSFET, a new phenomenon is generated called 'Near-avalanche breakdown'.
- When the voltage is drained to the maximum extent, then there are chances of a reduction in the size of MOSFET.
- Another action known as parasitic BJY can also occur due to increased voltage.
- Increased supply of current can damage the SiO2 layer which results in breakdown and ultimately causes failure of the device.
Similar questions
History,
4 months ago
Math,
4 months ago
English,
4 months ago
Computer Science,
8 months ago
Physics,
1 year ago
Computer Science,
1 year ago