Nitrogen gas in the oxidation system is used as the process gas during system idle,temperature ramping, wafer loading steps, and chamber purging, because nitrogen does not react with silicon at the processing temperature. A trace of hcl gas is passed along with process gas (nitrogen) for dry oxidation of silicon wafers. This helps as:
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Gas. Deliver. System. Process. Tubes. Exhaust. Loading. System .... Ramping. – Load wafer slowly at a lower temperature (idle ... Furnaces are commonly used in thermal processes
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- Chemical Purification of Metallurgical Grade Silicon
- By treating MSG powder with anhydrous hydrogen chloride at 300°C, you can make trichlorosilane (SiHCl₃).
- Trichlorosilane (SiHCl3) boils at 31.8°C when chlorine combines with impurities to form AlCl₃.
- Oxygen originates from the gas phase, while silicon comes from the solid substrate, in the oxidation process.
- As a result, silicon dioxide consumes as it grows.
- The chemical reaction of silicon with oxygen to generate silicon is known as oxidation.
- Oxidation in the absence of moisture The oxide is delivered as a high-purity gas.
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