On increasing the temperature of a reverse biased P-N junction Germanium
diode the reverse saturation current increases because
(1) The mobility of charge carriers increases
(2) The minority carrier concentration increases
(3) The majority carrier concentration increases
(4) The mobility of charge carriers decreases
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Answer:
the answer is 1
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Answered by
0
Answer:
Option 1
cause as temperature increases electron hole pair increases and their conductivity increases.
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