On reverse biasing the pn junction, its potential barrier becomes
Answers
Answered by
0
Higher or you can say more than before
Answered by
0
Due to diffusion free electrons diffuse from n type to p type and holes diffuse from p type to n type
Due to this a layer off positive charge built on n side and negative charge over p side
As a result, potential difference is set up across pn junctiin which prevents further diffusion of charge carriers which is called potential barrier
As reverse voltage supports potential barrier and effective barrier potential increases
As a result width of depletion layer increases
Similar questions