Question

Parameter extraction from diode i-v characteristics

Answer 1

Abstract
A technique is proposed to extract the reverse saturation current parameter and ideality factor of semiconductor junctions from the low forward voltage region of the device’s characteristics. The method involves performing a mathematical operation on the experimental data that allows to calculate the parameters at values of forward current smaller than the reverse saturation current. The procedure was tested and its accuracy verified on synthetic I–V characteristics, with and without added simulated experimental error or noise. Good agreement is obtained between the parameters used in modeling and the extracted values. The procedure was also applied to experimentally measured IB–VBE characteristics of a real power BJT.

Answer 2

The performance of the current–voltage properties of solar panels and photovoltaic modules is influenced by device factors such as shunt and series resistances, saturation current, and diode ideality factor.

These parameters must be determined because performance parameters are generated from the I–V curve, and device parameters give information that is important in understanding performance losses.

The characteristics retrieved from I–V curves provide insight into the many mechanisms involved in device operation. The parameter extraction procedure used in this research is a useful tool for obtaining device parameters that reflect device performance processes.