please solve question number 41
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The diode is fabricated such that the generation of e-h pairs takes place in or near the depletion region of the diode. Due to electric field of the junction, electrons and holes are separated before they recombine. The direction of the electric field is such that electrons reach n-side and holes are collected on p-side giving rise to an emf. When an external load is connected, current flows. The magnitude of the photocurrent depends on the intensity of incident light (photocurrent is proportional to incident light intensity).
The diode is fabricated such that the generation of e-h pairs takes place in or near the depletion region of the diode. Due to electric field of the junction, electrons and holes are separated before they recombine. The direction of the electric field is such that electrons reach n-side and holes are collected on p-side giving rise to an emf. When an external load is connected, current flows. The magnitude of the photocurrent depends on the intensity of incident light (photocurrent is proportional to incident light intensity).Consider the case of an n-type semiconductor. Obviously, the majority carrier density (n) is considerably larger than the minority hole density p (i.e., n >> p). On illumination, let the excess electrons and holes generated be n'' and p'', respectively:
The diode is fabricated such that the generation of e-h pairs takes place in or near the depletion region of the diode. Due to electric field of the junction, electrons and holes are separated before they recombine. The direction of the electric field is such that electrons reach n-side and holes are collected on p-side giving rise to an emf. When an external load is connected, current flows. The magnitude of the photocurrent depends on the intensity of incident light (photocurrent is proportional to incident light intensity).Consider the case of an n-type semiconductor. Obviously, the majority carrier density (n) is considerably larger than the minority hole density p (i.e., n >> p). On illumination, let the excess electrons and holes generated be n'' and p'', respectively:n’ = n + n''
The diode is fabricated such that the generation of e-h pairs takes place in or near the depletion region of the diode. Due to electric field of the junction, electrons and holes are separated before they recombine. The direction of the electric field is such that electrons reach n-side and holes are collected on p-side giving rise to an emf. When an external load is connected, current flows. The magnitude of the photocurrent depends on the intensity of incident light (photocurrent is proportional to incident light intensity).Consider the case of an n-type semiconductor. Obviously, the majority carrier density (n) is considerably larger than the minority hole density p (i.e., n >> p). On illumination, let the excess electrons and holes generated be n'' and p'', respectively:n’ = n + n''p’ = p + p''
The diode is fabricated such that the generation of e-h pairs takes place in or near the depletion region of the diode. Due to electric field of the junction, electrons and holes are separated before they recombine. The direction of the electric field is such that electrons reach n-side and holes are collected on p-side giving rise to an emf. When an external load is connected, current flows. The magnitude of the photocurrent depends on the intensity of incident light (photocurrent is proportional to incident light intensity).Consider the case of an n-type semiconductor. Obviously, the majority carrier density (n) is considerably larger than the minority hole density p (i.e., n >> p). On illumination, let the excess electrons and holes generated be n'' and p'', respectively:n’ = n + n''p’ = p + p''Here n’ and p’ are the electron and hole concentrations at any particular illumination and n and p are carriers concentration when there is no illumination. Remember n'' = p'' and n >> p.
The diode is fabricated such that the generation of e-h pairs takes place in or near the depletion region of the diode. Due to electric field of the junction, electrons and holes are separated before they recombine. The direction of the electric field is such that electrons reach n-side and holes are collected on p-side giving rise to an emf. When an external load is connected, current flows. The magnitude of the photocurrent depends on the intensity of incident light (photocurrent is proportional to incident light intensity).Consider the case of an n-type semiconductor. Obviously, the majority carrier density (n) is considerably larger than the minority hole density p (i.e., n >> p). On illumination, let the excess electrons and holes generated be n'' and p'', respectively:n’ = n + n''p’ = p + p''Here n’ and p’ are the electron and hole concentrations at any particular illumination and n and p are carriers concentration when there is no illumination. Remember n'' = p'' and n >> p.solution