Question

Pure silicon at 300 k has equal electron ne and hole (nh) concentration of 1.5 1016 m3. Dopping by indium increases nh to 4.5 1022 m3. The ne in the doped silicon is

Answer 1

p-type having electron concentration ne = 5 x 109 m-3

Answer 2

ANSWER

Pure silicon at 300 k has equal electron ne and hole (nh) concentration of 1.5 1016 m3. Dopping by indium increases nh to 4.5 1022 m3. The ne in the doped silicon is :

5 × 10^9.