Question

Q.3 A piece of silicon is doped uniformly with phosphorous with a doping concentration of
10/cm'. The expected value of mobility versus doping concentration for silicon assuming
full dopant ionization is shown in the following figure. Find the conductivity of silicon
sample at 300K
Hole and Electron Mobility in Silicon at 300K
1400
Electron
Hole
1200
1000
800
Mobility (cm? V'.s')
600
400
200
1.E.13 1.E.14 1.E.15 1.E.16 1. E.17 1.E.18 1. E. 19 1.
E20
Doping Concentration (cm)

Answer 1

Answer:

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