Question

ques
Type NAT
In a certain n-type region of a semiconductor in thermal equilibrium, there is a hole concentration
with the following distribution
P.2) = 10 (1 - 9 * 109x)cm. for OS X 10+ (x in cm).
Assume that, in this region, the electron mobility and hole mobilities are Yn = 500 cmN-sec and we
= 200 cm2/V-sec respectively. Then the electric field distribution in the region at x = 10-4 cm is
* 102 V/cm. (Assume, Dp = 5 cm2/sec)
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Answer 1

Answer:

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Explanation:

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