राइज इन टेंपरेचर चैप्टर फर्मी लेवल एंड एक्सटेंसिव सेमीकंडक्टर ट्रू ओर फॉल्स
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राइज इन टेंपरेचर चैप्टर फर्मी लेवल एंड एक्सटेंसिव सेमीकंडक्टर ट्रू ओर फॉल्स
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Abstract
The impact of temperature on the important properties of semiconducting materials used for electronic devices and circuit fabrication is examined, with a focus on silicon. The properties considered are the energy bandgap (the Varshini and Blaudau et al models), intrinsic carrier concentration and saturation velocity of carriers (the Quay model, and Ali-Omar and Reggiani model). Various mobility equations are discussed, e.g. the Arora–Hauser–Roulston equation, Klaassen equations and those in the MINIMOS model. The differences between uncompensated and compensated semiconductors regarding the temperature dependence of the mobility and carrier concentration are described. The ionization regimes of semiconductors are also described, namely the carrier freeze-out regime, extrinsic or saturation regime, and intrinsic regime. The conceptual development in this chapter paves the way for the temperature-related discussions in forthcoming chapters.
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