Scientists at Institute of NanoScience and Technology (INST) have produced an ultra-high mobility 2d-electron gas (2DEG).
Regarding this, which of the following is/are
correct?
1. Due to the high mobility of the electron gas, electrons do not collide inside the medium, hence the memory and information does not get lost.
2. Devices having 2DEG do not heat up easily and need less input energy to operate.
3. It can speed up transfer of quantum information and signal from one part of a device to another.
Select the correct option using the còdes given below:
(a) 1 and 2 only
(b) 2 and 3 only
(c) 3 only
(d) 1, 2 and 3
Answers
Answered by
13
Option D - 1, 2 and 3
■ Explanation :-
- Scientists at Institute of Nano Science and Technology (INST), Mohali (Punjab), an autonomous institution of Department of Science and Technology (DST), Government of India, have produced an ultra-high mobility 2d-electron gas(2DEG) at the interface of two insulating oxide layers.
- Due to the high mobility of the electron gas, electrons do not collide inside the medium for a long distance and hence do not lose the memory and information. Hence, such a system can easily remember and transfer its memory for a long time and distance. In addition, since they collide less during their flow, their resistance is very low, and hence they don’t dissipate energy as heat. So, such devices do not heat up easily and need less input energy to operate.
- It can speed up transfer of quantum information and signal from one part of a device to another and increase data storage and memory.
- According to the INST team, realization of large Rashba-effect at such oxide interfaces containing highly mobile electron gas may open up a new field of device physics, especially in the field of quantum technology applicable for next-generation data storage media and quantum computers.
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