Physics, asked by shauryas2674, 11 months ago

Show that at very low drain voltages a mosfet is equivalent to a resistance (5) which increases with increase in thickness of gate oxide.

Answers

Answered by Anonymous
3

Answer:

In other words, for an n-channel depletion mode MOSFET: +VGS means more electrons and more current. While a -VGS means less electrons and less current. The opposite is also true for the p-channel types. Then the depletion mode MOSFET is equivalent to a “normally-closed” switch.

Similar questions