The barrier potentional voltage of silicon element is
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An unbiased diode has a depletion layer at the pn junction. The ions in this depletion layer produce a barrier potential. At room temperature, this barrier potential is approx. 0.7V for a silicon diode.
increasing the voltage above 0.7V may result of high current which destroy the diode.
increasing the voltage above 0.7V may result of high current which destroy the diode.
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