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The breakdown in a reverse biased p-n junction diode is more likely to occur due to

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Answered by Anonymous
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The breakdown in a reverse biased p-n junction diode is more likely to occur due to applied reverse voltage.

A junction diode is said to be reversed bias when the positive terminal of external battery is connected to the n region and the negative terminal to the p region of the diode.  

AVALANCHE BREAKDOWN

If the reversed bias is made to be very high,then the minority carriers will acquire high kinetic energy which breaks the covalent bond present near the junction and liberates the electrons hole pairs.

The process of the production of electron hole pairs is called the avalanche breakdown.

Thus the junction may be damaged due to the excessive heat liberated.

Zener diode is designed to operate in the breakdown region under reversed bias.

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