The breakdown in a reverse biased pn junction diode is more likely to occur due to
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When it comes to he breakdown in a reverse biased PN junction diode, it will probably happen only because of the accumulation of the higher charge at the biased region.
This is the main cause the breakdown. Hope this answer will help you with the answer you are looking for.
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Answer:the main reasons are collisions of fast moving electrons with bonded electrons(for lightly doped ) and due to breakage of covalent bonds in the presence strong electric field (for heavily doped)
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