Question

the critical voltage of silicon​

Answer 1

Explanation:

A high voltage SOI device with 80nm silicon layer and 0.4μm dielectric layer is designed. A high ES,C of. 134V/μm is obtained, which makes EI and VB,V reach to.

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Answer 2

Explanation:

(electronics) The highest theoretical value of steady anode voltage, at a given steady magnetic flux density, at which electrons emitted from the cathode of a magnetron at zero velocity would fail to reach the anode...

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