Question

The depletion layer in P-N junction region is caused by

Answer 1

Answer: When a forward bias is applied to p-n junction after a certain voltage (called cut in voltage i.e for silicon it is 0.7v and for germanium it is 0.3v) then the p-n junction diode is in turn on condition i.e. the depletion layer is diminished and current flow.Nov 14, 2015