The diode shown in circuit is silicon diode. The potential difference between points a and b
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PN Junction Diode
A PN-junction diode is formed when a p-type semiconductor is fused to an n-type semiconductor creating a potential barrier voltage across the diode junction
The effect described in the previous tutorial is achieved without any external voltage being applied to the actual PN junction resulting in the junction being in a state of equilibrium.
However, if we were to make electrical connections at the ends of both the N-type and the P-type materials and then connect them to a battery source, an additional energy source now exists to overcome the potential barrier.
The effect of adding this additional energy source results in the free electrons being able to cross the depletion region from one side to the other. The behaviour of the PN junction with regards to the potential barrier’s width produces an asymmetrical conducting two terminal device, better known as the PN Junction Diode.
A PN-junction diode is formed when a p-type semiconductor is fused to an n-type semiconductor creating a potential barrier voltage across the diode junction
The effect described in the previous tutorial is achieved without any external voltage being applied to the actual PN junction resulting in the junction being in a state of equilibrium.
However, if we were to make electrical connections at the ends of both the N-type and the P-type materials and then connect them to a battery source, an additional energy source now exists to overcome the potential barrier.
The effect of adding this additional energy source results in the free electrons being able to cross the depletion region from one side to the other. The behaviour of the PN junction with regards to the potential barrier’s width produces an asymmetrical conducting two terminal device, better known as the PN Junction Diode.
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