The drift current in a reverse-biased p-n junction is increased in magnitude if the temperature of the junction is increased. Explain this on the basis of creation of hole-electron pairs.
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Drift current in a p-n junction diode
In a p-n junction diode, electrons and holes are the minority charge carriers in the p-region and the n-region, respectively. ... When an electric field is applied across the semiconductor material, the charge carriers attain a certain drift velocity .
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The drift current rises in a reverse-biased p -n junction with an increase in temperature.
Explanation:
- Increasing the temperature of a reverse-biased p-n junction results in the breaking of bonds due to the increase in the charging carriers ' thermal energy.
- Drift current is attributable to the movement across the junction from the minority carriers.
- So, the applied voltage facilitates the movement of minority charge carriers through the junction when a p -n junction is reverse- biased.
- Therefore, the drift current rises in a reverse-biased p -n junction with an increase in temperature.
To know more about drift current, visit:
Diffusion current in a p-n junction is greater than the drift current in magnitude (a) if the junction is forward-biased?
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Drift current in the semiconductors depends upon
(A) only the electric field
(B) only the carrier concentration gradient
(C) both the electric field and the carrier concentration
(D) both the electric field and the carrier concentration gradient
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