The Fermi energy E_F in a p-type semiconductor need to be above the top of the valence band E_v by an energy of 3kT for the semiconductor to be in the limit of low doping. Calculate the upper limit of doping for this criterion to be satisfied. Given, for Silicon, Eg=1.1 eV and ni=1×10^(10) /cm^3 at T=300K, k=8.6×10^(-5)eV/K.
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