Question

The fraction of electrons excited across the energy gap of silicon (Eg = 1.1 eV) at room temperature (300K) is?

Answer 1

Answer:

5.712 ×10 ^-10

Explanation:

n= -1.1/(e^∆E /2kT)

= -1.1/(e^2×300×8.62×10^-5)

=5.7 ×10^-10

Answer 2

The fraction of electrons excited across the energy gap $4.43*10^-^1^0.$

Given:

The energy gap of the silicon is 1.1eV.

The temperature given here is 300K.

To find:

The fraction of electrons excited across the energy gap.

Solution:

We can calculate the fractions of electrons using the formulae as

$n=-1.1/(e^E^ /^2^k^T)$

$n= -1.1/(e^2^*^3^0^0^*^8^.^6^2^*^1^0^-^5)$

$n= 4.43*10^-^1^0.$

Thus, the fraction of electrons excited across the energy gap $4.43*10^-^1^0.$

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