The fraction of electrons excited across the energy gap of silicon (Eg = 1.1 eV) at room temperature (300K) is?
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Answered by
5
Answer:
As in the given question the energy gap of the silicon is given as 1.1eV.
Also the temperature given here is , T= 300K.
We can calculate the fractions of electrons using the formulae as , f(Ec).
We know,
f(Ec)= e^-(Eg/2kT) = e^-(1.1/2×0.026) [Since boltzman constant kT=.026 eV]
= 4.43×10^-10.
So, from the above result we know that the fraction of electrons excited across the energy gap 4.43×10^-10.
Answered by
0
Answer:
below
Explanation:
answer of the given question is 4.29x10^-¹⁰ as per my calculation
1.1
--- x 0.026 x 300 = 4.29
2
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