Physics, asked by sawanindia4, 11 months ago

The fraction of electrons excited across the energy gap of silicon (Eg = 1.1 eV) at room temperature (300K) is?

Answers

Answered by AneesKakar
5

Answer:

As in the given question the energy gap of the silicon is given as 1.1eV.

Also the temperature given here is , T= 300K.

We can calculate the fractions of electrons using the formulae as , f(Ec).

We know,

f(Ec)= e^-(Eg/2kT) = e^-(1.1/2×0.026) [Since boltzman constant kT=.026 eV]

= 4.43×10^-10.

So, from the above result we know that the fraction of electrons excited across the energy gap 4.43×10^-10.

Answered by gaurangmarathe
0

Answer:

below

Explanation:

answer of the given question is 4.29x10^-¹⁰ as per my calculation

1.1

--- x 0.026 x 300 = 4.29

2

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