Question

The p-type region of a silicon p-n junction is doped with 1016 boron atoms per cubic centimeter, and the n-type region is doped with 1018 phosphorus atoms per cubic centimeter. Assume a step p-n junction and that all doping atoms are ionized. The intrinsic carrier concentration in silicon at

Answer 1

Explanation:

The p-type region of a silicon p-n junction is doped with 1016 boron atoms per cubic centimeter , and the n-type region is doped with 1018 phosphorus atoms per cubic centimeter. Assume a step p-n junction and that all doping atoms are ionized. The intrinsic carrier concentration in silicon at