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the position of Fermi level in P type semiconductor at extremely high doping concentration is​

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Answered by kritinarang
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For a p-type semiconductor with Na donors which are fully ionized, p = Na when Na ≫ ni, so that the Fermi level is shifted below the center of the band gap, closer to the valence band. The Fermi level position with carrier type and concentration for Si is summarized in figure 4.

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