The potential barrier in P-N diode is due to
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The potential barrier of P-n junction diode is due to concentration of opposite charges each side of the wafer.
For details refer to the attachment
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Answer:
see the attachment above,you will understand it clearly
Explanation:
In p-n junction diode,
because of charge carriers in n,abd hole carriers in p
it forms negative ions at p
positive ions at n
This difference leads to potential barrier(Vb)
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