The resistivity of doped silicon material is 0.01 ohm-m. The Hall Co-efficient is 4 x 104 mº/C. Assuming single carrier conduction. Find the mobility and density of charge carriers. e=1.6 x 10-1°C.
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The resistivity of doped silicon material is 0.01 ohm-m. The Hall Co-efficient is 4 x 104 mº/C. Assuming single carrier conduction. Find the mobility and density of charge carriers. e=1.6 x 10-1°C.
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