Question

Thin gate oxide in a cmos process in preferably grown using

Answer 1

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Answer 2

Answer:

• A CMOS (Complimentary metal-oxide-semiconductor) process is a type of ‘fabrication process’ used for ‘constructing integrated circuits’.
• The main purpose is to “grow a layer” of $\mathrm{SiO}_{2}$over a silicon substrate and both wet and dry oxidation methods are implied for this purpose.
• The thin gate oxide in a metal oxide semiconductor in a CMOS process is preferably grown using dry oxidation process.
• Dry oxidation process utilizes oxygen for the silicon oxide to grow.
• Using dry oxidation, the ‘thickness of the oxide’ can be controlled and so thin oxide gates such as screen or pad oxides can be grown.