Question

through a 10-μm layer of intrinsic silicon across which a voltage of 3 V is imposed. Let μn = 1350 cm2 /V ·s and μp = 480 cm2 /V ·s·​

Answer 1

Answer:

3.7 Contrast the electron and hole drift velocities through a 10-μm layer of intrinsic silicon across which a voltage of 3 V is imposed. Let μn = 1350 cm2/V ・ s and μp = 480 cm2/V ・ s・

was it helpful for you

please mark my answer as brinliest

Answer 2

through a 10-μm layer of intrinsic silicon across which a voltage of 3 V is imposed. Let μn = 1350 cm2 /V ·s and μp = 480 cm2 /V ·s·

Hey I've answered u before also but I think it got deleted even though it is boring but I ' M satisfied with my life .