To calculate the cutoff frequency of an ideal MOSFET with a constant mobility. Assume that the electron mobility in an n-channel device is mu(n) = 400cm2/V-s and that the channel length is L = 4 micro m. Also assume that Vt = I V and let Vcs = 3 V.
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For an n-channel MOSFET, for example:
where μ_n = electron mobility : speed / electric field
V_GS = voltage difference from Gate to Source
V_T = Threshold voltage for V_GS
L = channel length between source and drain.
where μ_n = electron mobility : speed / electric field
V_GS = voltage difference from Gate to Source
V_T = Threshold voltage for V_GS
L = channel length between source and drain.
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