To describe forward and reverse characteristics of p-n junction diode
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☘ Forward characteristics of diode :
- Voltage across the diode is varied, by changing source voltage (Vs) millameter measures the corresponding current (I).
- The diode does not conduct well until the voltage across diode exceeds the barrier potential (0.7v for silicon and 0.3 for germanium). Beyond 0.7v, the current increases sharply even for small increase in voltage.
- The voltage at which, current start increasing rapidly called knee voltage.
- The resistance offered by the diode is very small. The forward biased diode is considered as a closed switch.
☘ Reverse characteristics of a diode:
- In reverse bias there is no flow of current due to majority carriers, a small current flows in the circuit due to minority carriers. It is in the order of μA for Germanium and nA for silicon diodes.
- The reverse saturation current (Is) is also called Leakage current. Current depends on temperature, doping level.
- The reverse current increases with reverse voltage and quickly reaches the saturation value. Then it is independent of reverse voltage and remains constant upto breakdown voltage.
- The reverse biased offers a high resistance and it may be considered as an open switch.
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