what is temperature of junction
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A PN junction diode contains the P- type and N- type semiconductors joined under certain conditions.
Due to this as soon as they both comes in contact with each other a barrier potential is developed at the centre due to transfer of electrons and holes from N-type to P-type and vice versa.
This barrier potential is a function of charge of charge carriers. The length of barrier potential depends upon the type of semiconductor.
For silicon it is 0.7 v and
For germanium it is 0.3 v.
Thus as the Temperature of the PN junction increases it helps to increase the velocity of holes and electrons and thus results in increase in conductance. The barrier potential decreases and conductivity of the diode increases.
Due to this as soon as they both comes in contact with each other a barrier potential is developed at the centre due to transfer of electrons and holes from N-type to P-type and vice versa.
This barrier potential is a function of charge of charge carriers. The length of barrier potential depends upon the type of semiconductor.
For silicon it is 0.7 v and
For germanium it is 0.3 v.
Thus as the Temperature of the PN junction increases it helps to increase the velocity of holes and electrons and thus results in increase in conductance. The barrier potential decreases and conductivity of the diode increases.
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