What is the main difference between the upper and lower switching of a mosfet?
Answers
Answer:
the main difference is the current capacity, and gate capacitance, this is controlled by the conducting channel in the transistor
Answer:
Explanation:First, you need to define what type of Mosfet you are using. Is it depletion mode or enhanced mode? Is the mosfet channel P-type or N-type? I will assume you are asking about N-type, enhanced mode mosfets; although, in your previous question about battery charging you used an P-type, enhanced mode device.
"Low-side" means the current travels from the load or device through the mosfet to ground (common). "High-side" means the current travels from the supply through the mosfet to the load and then to ground.
Another way to put that is:
Low-side = mosfet source to ground, drain to load, load to supply.
High-side = mosfet drain to supply, source to load, load to ground.
Low-side switching is most common for N-channel devices because the gate drives are simpler. High-side is used when you need to supply power to a device that is grounded.
As for specifics, there are hundreds of articles on gate drives. IR, Vishay, Fairchild, and TI have plenty of advice.
As for the gate drive of the two configurations. Remember that to turn on a N-channel device, the gate must be at a potential above that of the source. Often 10V ,e.g., Vgs =10V. That is easy to do with a low-side configuration, since the source is referenced to ground.
Now, what happens with a high-side configuration. The voltage drop across the mosfet is very small, so the source is effectively at the supply potential (i.e., the supply is effectively across the load). Now to get a Vgs =10 V, the gate must be at a potential higher than the supply. Some sort of circuit to provide a boost is needed, such as a charge pump.
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