What is the non linear V-I relation in a P-N junction in forward bias?
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Since the P-N junction diode's resistance changes according to the direction of current flow just above the zero bias, hence it is called a non linear device. The current depends on the applied voltage. The relation between voltage and current is exponential, it is expressed as
I=I
s
⎣
⎢
⎢
⎡
e
(
ηV
T
V
)
−1
⎦
⎥
⎥
⎤
where, I
s
is the reverse saturation current
η is 1 for germanium and 2 for silicon.
V is the applied voltage.
V
T
is the voltage equivalent of the temperature.
Therefore for germanium diode.
I=I
s
⎣
⎢
⎢
⎡
e
(
V
T
V
)
−1
⎦
⎥
⎥
⎤
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