Question

What will happen if we are going to deposit metal on a silicon substrate without any insulating layer in between:

Answer 1

Answer:

Explanation:

Silicon di oxide is used as an insulation layer between the gate and the conducting channel of the MOSFET. Reason we use 'SiO2′ is that it provides a better isolation and is a good dielectric material, and also we just need to do oxidation on the already grown 'Si' layer to achieve isolation.
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