When a potential difference v is applied across a conductor at temperature t the drift velocity of electrons is proportional to?
Answers
Answer:
It will be too long to derive here so i am giving you exactly what you want.
There are two relations that shows the temperature dependence of Potential difference as well as output current.
The first relation is expressed as
Id = Is* exp(Vd/nVt-1)
where Id= diode current
Is=saturation current (diode context is used so saturation current must be there as it shows its forward characteristics in saturation region)
Vd= Drift voltage
Vt= thermal voltage.
Vt is actually the thermal voltage that is temperature dependent as
Vt=kT/q (approximate value is 0.0026 Volts)
n defines the diode that is used.
n=1 for Germanium (Ge)
n=2 for Silicon (Si)
here k is Boltzmann’s constant and T is temperature in Kelvin. q is the charge of electron.
2. Another relation is the modification of the first one in terms of voltage
V=kT/q*ln(I/Is)
Explanation: