When the gate – to – source voltage (VGS) of a MOSFET with threshold
voltage of 400 mV, working in saturation is 900 mV, the drain current is
observed to be 1 mA. Neglecting the channel width modulation effect and
assuming that the MOSFET is operating at saturation, the drain current
for an applied VGS of 1400 mV is
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