Question

Which method can be used for deposition of poly-crystalline-Si in IC fabrication?
E-beam evaporation
Sputtering
PECVD
LPCVD

Answer 1

deposition method is used

Answer 2

LPCVD method can be used for deposition of poly-crystalline-Si in IC fabrication

Explanation:

• Low pressure chemical vapor deposition (LPCVD) is a chemical vapor deposition technology that practices heat to start or begin a reaction of a precursor gas on the compact substrate.
• This reaction at the surface is what systems the solid stage substantial. Low pressure (LP) is used to decrease any unwanted gas phase reactions, and also increases the uniformity across the substrate.
• Chemical vapor deposition (CVD) is a vacuum deposition method used to produce high quality, high-performance, solid materials.
• In typical CVD, the wafer (substrate) is exposed to one or more volatile precursors, which react and/or decompose on the substrate surface to produce the desired deposit.

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