Question

which of the dopping elements would not be suitable for converting intrinsic semiconductor​

Answer 1

Answer:

An indirect band gap intrinsic semiconductor is one in which the maximum energy of the valence band occurs at a different k (k-space wave vector) than the minimum energy of the conduction band. ... Examples include silicon and germanium.

Answer 2

Answer:

Germanium cannot be doped with silicon to increase its conductivity since it is a group 14 element.

Explanation:

Germanium:

• Even though carbon lies in the same group of the periodic tables as germanium and silicon, it is not a pure or an intrinsic semiconductor.
• Germanium is a chemical element with the symbol Ge and atomic number 32. It is a lustrous, hard-brittle, grayish-white metalloid in the carbon group, chemically similar to its group neighbors silicon and tin. Pure germanium is a semiconductor with an appearance similar to elemental silicon
• In addition to being utilized in electrical equipment, germanium is also employed in phosphors for fluorescent lighting and as a component of alloys. Germanium is utilized in equipment for detecting and measuring infrared radiation, such as windows and lenses since it is transparent to this radiation.

Here are some crucial details concerning germanium.

• Atomic number: 32.
• Atomic weight: 72.630.
• Melting point: 1211.40 K (938.25°C or 1720.85°F)
• Boiling point: 3106 K (2833°C or 5131°F)
• Density: 5.323 grams per cubic centimeter.
• Phase at room temperature: Solid.
• Element Classification: Semi-metal.
• Period number: 4.

Therefore Germanium cannot be doped with silicon to increase its conductivity since it is a group 14 element.