Which of the following statements is incorrect?
When silicon is doped with B or Ga n-type
semiconductor is formed
Germanium is doped with Al to give p-type
semiconductor
Semiconductors also consist of GaAs which has
average valence of four electrons as in Ge or SL
TIQ Croz and ReOz behave like metals in terms of
conductivity
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Explanation:
Since p-type semiconductor has holes as majority charge carriers, thus for obtaining a p-type semiconductor we have to dope a pure silicon with acceptor elements of group III A like aluminium, boron, gallium etc.
And n-type semiconductor has electrons as majority charge carriers, thus for obtaining a n-type semiconductor silicon should be doped with electron rich donor elements of V A group like phosphorous, arsenic etc.
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