which one of the following is correct regarding to doping level in emitter base and collector resepectivelly
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Emitter is always forward biased with respect to base, so that it can supply a large number of majority carriers.
The emitter is heavily doped so that it can inject a large number of charge carriers (electrons or holes) into the base. The base is lightly doped and very thin, it passes most of the emitter injected charge carriers to the collector. The collector is moderately doped.
Note: The emitter diode is always forward biased whereas collector diode is always reverse biased.
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