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Figure 16.6. Schematic of SEI formation on silicon surfaces. (a) A solid silicon nanowire expands upon lithiation and delithiation, which results in a very thick SEI layer on the outside of the silicon nanowires. (b) Similarly, a thick SEI grows outside the silicon nanotube without a mechanical constraining layer, which also has a varying and unstable interface with the electrolyte. (c) Designing a mechanical constraining layer on the hollow silicon nanotubes can prevent silicon from expanding outside toward the electrolyte during lithiation, with the result that a thin and stable SEI can be built. (d) Capacity retention of different silicon nanostructures at rate of C/5. (e) Lithiation/delithiation capacity and CE of DWSiNTs cycled at 12 C with no significant capacity fading after 6000 cycles.
Answer:
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