Why collector voltage is higher than emitter voltage?
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The breakdown voltage depends on the width of the depletion layer and the doping levels. Because of the heavy doping level, the emitter diode has a low breakdown voltage approximately 5 to 30 V. The collector diode is less heavily doped so its breakdown voltage is higher around 20 to 300 V.
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I'm reading a tutorial on basic transistor operation. It says for an npn transistor to operate such conditions are necessary:
VC > VE, by at least a few X 0.1V
VB > VE
VC > VB
We do not exceed maximum ratings for voltage differences or currents
Here I don't get why VC > VB is necessary. It looks to be if VC is bigger than VB, then the current will flow thorough the base.
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