Why dry oxidation is used for deposition of gate oxide ?
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Dry oxidation has lower growth than the wet oxidation, although the oxide film quality is better. Therefore thin oxides such as screen oxide, pad oxide and specially the gate oxide uses the dry oxidation process. Compared with others, this has best material characteristics and quality. The oxidation rate is low and so the oxide thickness can be controlled accurately.
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In world of semiconductors , Oxidation refers to Conversion of Silicon to silicon dioxide.
Generally dry oxidation is preferred for deposition of gate oxide because:
chemical reaction:
Si + O2 ---> SiO2
1. Dry oxidation results in BEST quality oxide.
2. The oxidation rate growth is low.
3.Oxide film quality is better.
4. Results in higher density oxide
Generally dry oxidation is preferred for deposition of gate oxide because:
chemical reaction:
Si + O2 ---> SiO2
1. Dry oxidation results in BEST quality oxide.
2. The oxidation rate growth is low.
3.Oxide film quality is better.
4. Results in higher density oxide
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